MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations W.-C. Liu, K.-H. Yu, K.-W. Lin, K.-P. Lin, C.-H. Yen, C.-C. Cheng, C.-K. Wang et H.-M. ChuangJ. Phys. IV France, 11 PR3 (2001) Pr3-951-Pr3-955DOI: https://doi.org/10.1051/jp4:20013119
