High-performance In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors (δ-PHEMT's) W.-C. Liu, K.-W. Lin, K.-H. Yu, W.-L. Chang, C.-C. Cheng, C.-K. Wang et H.-M. ChangJ. Phys. IV France, 11 PR3 (2001) Pr3-945-Pr3-950DOI: https://doi.org/10.1051/jp4:20013118
