MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors W.-C. Liu, H.-J. Pan, C.-H. Yen, K.-P. Lin, C.-Z. Wu, W.-H. Chiou et C.-Y. ChenJ. Phys. IV France, 11 PR3 (2001) Pr3-931-Pr3-936DOI: https://doi.org/10.1051/jp4:20013116
