Effect of TaSi2 and WSi2 deposition on interfacial defects and Fowler-Nordheim injection in polycide gate SiO2 MOS capacitors S. Croci, C. Plossu, B. Balland, J. L. Autran et P. BoivinJ. Phys. IV France, 11 PR11 (2001) Pr11-199-Pr11-203DOI: https://doi.org/10.1051/jp4:20011132
