Annealing effects on electrical and structural properties of Al2O3 films deposited by ALD Y. Chang, F. Ducroquet, L. G. Gosset, A. Sibai, V. Dashtizadeh, J. F. Damlencourt, G. Rollandan et F. MartinJ. Phys. IV France, 11 PR11 (2001) Pr11-139-Pr11-143DOI: https://doi.org/10.1051/jp4:20011122
