Application of HRTEM to studies of electronic structure and atomic configuration of interface in SiC/SiC composites T. Shibayama, G. W. He, Heishichiro Takahashi et A. KohyamaJ. Phys. IV France, 10 PR6 (2000) Pr6-97-Pr6-103DOI: https://doi.org/10.1051/jp4:2000617
