Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure E. de Paola, P. Duverneuil, A. Langlais et M. NguyenJ. Phys. IV France, 09 PR8 (1999) Pr8-221-Pr8-228DOI: https://doi.org/10.1051/jp4:1999827
