Modelling of SiC sublimation growth process : Influence of experimental parameters on crystal shape A. Pisch, E. Blanquet, M. Pons, C. Bernard, M. Anikin, J. M. Dedulle et R. MadarJ. Phys. IV France, 09 PR8 (1999) Pr8-213-Pr8-219DOI: https://doi.org/10.1051/jp4:1999826
