Contribution to the modeling of CVD silicon carbide growth C. Raffy, E. Blanquet, M. Pons, C. Bernard, C. F. Melius et M. D. AllendorfJ. Phys. IV France, 09 PR8 (1999) Pr8-205-Pr8-212DOI: https://doi.org/10.1051/jp4:1999825