MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor W. C. Liu, H. J. Pan, S. Y. Cheng, W. C. Wang, J. Y. Chen, S. C. Feng et K. H. YuJ. Phys. IV France, 09 PR8 (1999) Pr8-1163-Pr8-1169DOI: https://doi.org/10.1051/jp4:19998145
