A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD W. C. Liu, S. Y. Cheng, H. J. Pan, J. Y. Chen, W. C. Wang, S. C. Feng et K. H. YuJ. Phys. IV France, 09 PR8 (1999) Pr8-1155-Pr8-1161DOI: https://doi.org/10.1051/jp4:19998144
