Nucleation behavior during the first stages of SiC growth on different substrates E. Hurtós, J. Rodríguez-Viejo, M. T. Clavaguera-Mora et K. ZekentesJ. Phys. IV France, 09 PR8 (1999) Pr8-1069-Pr8-1074DOI: https://doi.org/10.1051/jp4:19998133
