Electron impact-ionization effects in UHV/CVD SiGe HBT's in the temperature range of 300 to 83 K G. Niu, U. Gogineni et J. D. CresslerJ. Phys. IV France, 08 PR3 (1998) Pr3-103-Pr3-107DOI: https://doi.org/10.1051/jp4:1998324
