Gamma radiation tolerance of UHV/CVD SiGe BiCMOS technology operated at cryogenic temperatures J. M. Roldán, J. D. Cressler, G. Niu, S. D. Clark et D. Nguyen-NgocJ. Phys. IV France, 08 PR3 (1998) Pr3-99-Pr3-102DOI: https://doi.org/10.1051/jp4:1998323
