Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs J. B. Roldán, F. Gámiz, J. A. López-Villanueva et J. E. CarcellerJ. Phys. IV France, 08 PR3 (1998) Pr3-57-Pr3-60DOI: https://doi.org/10.1051/jp4:1998314
