The drain-bias-variable characteristics of exponent γon l/fγ noise in DDD n-MOSFETs at 77 K and 300 K S.-L. Chen et S.-H. ChenJ. Phys. IV France, 08 PR3 (1998) Pr3-33-Pr3-35DOI: https://doi.org/10.1051/jp4:1998308
