Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K A. S. Nicolett, J. A. Martino, E. Simoen et C. ClaeysJ. Phys. IV France, 08 PR3 (1998) Pr3-25-Pr3-28DOI: https://doi.org/10.1051/jp4:1998306
