Temperature dependence of hot-carrier effects in 0.2 µm N- and P-channel fully-depleted Unibond MOSFETs S. H. Renn, C. Raynaud et F. BalestraJ. Phys. IV France, 08 PR3 (1998) Pr3-13-Pr3-16DOI: https://doi.org/10.1051/jp4:1998303
