Invited PaperComparison of the freeze-out effect in ln and B doped n-MOSFETs in the range 4.2 – 300 K I. Alawneh, E. Simoen, S. Biesemans, K. De Meyer et C. ClaeysJ. Phys. IV France, 08 PR3 (1998) Pr3-3-Pr3-8DOI: https://doi.org/10.1051/jp4:1998301
