DAFS Study of Strained III-V Epitaxial Semiconductors M. G. Proietti, H. Renevier, J. F. Berar, V. Dalakas, J. L. Hodeau, G. Armelles et J. GarcíaJ. Phys. IV France, 7 C2 (1997) C2-749-C2-751DOI: https://doi.org/10.1051/jp4:1997225
