N- and Al-K-Edge EXAFS of AIN Grown on GaAs by MBE M. Katsikini, E. C. Paloura, E. Holub-Krappe, T. S. Cheng et C. T. FoxonJ. Phys. IV France, 7 C2 (1997) C2-1127-C2-1128DOI: https://doi.org/10.1051/jp4:19972156
