Fabrication and Characterization of Single-Electron Transistors Based on Al/AlOx/Al and Nb/AlOx/Nb Tunnel Junctions K. Blüthner, M. Götz, W. Krech, H. Mühlig, Th. Wagner, H.-J. Fuchs, D. Schelle, L. Fritzsch, B. Nachtmann et A. NowackJ. Phys. IV France, 06 C3 (1996) C3-163-C3-167DOI: https://doi.org/10.1051/jp4:1996325
