Enhancements and Degradations in Ultrashort Gate GaAs and InP HEMTs Properties at Cryogenic Temperatures : an Overview F. Aniel, A. Sylvestre, Y. Jin, P. Crozat, A. de Lustrac et R. AddeJ. Phys. IV France, 06 C3 (1996) C3-145-C3-149DOI: https://doi.org/10.1051/jp4:1996322
