Effect of Transistor Geometry on the Electrical Characteristics of Si1-xGex Heterojunction Bipolar Transistors at Low Temperatures M. D.R. Hashim, R. F. Lever, P. Ashburn et G. J. ParkerJ. Phys. IV France, 06 C3 (1996) C3-119-C3-124DOI: https://doi.org/10.1051/jp4:1996318
