The Impact of Ge Grading on the Bias and Temperature Characteristics of SiGe HBT Precision Voltage References M. S. Latham, J. D. Cressler, A. J. Joseph et R. C. JaegerJ. Phys. IV France, 06 C3 (1996) C3-113-C3-118DOI: https://doi.org/10.1051/jp4:1996317
