Study on Feasibility of Minority Carrier Complete Drag in Silicon. New Investigation Method Intended for Indirect-Gap Semiconductors T. T. Mnatsakanov, L. I. Pomortseva et V. B. ShumanJ. Phys. IV France, 06 C3 (1996) C3-81-C3-86DOI: https://doi.org/10.1051/jp4:1996312
