Mobility Degradation Influence on the SOI MOSFET Channel Length Extraction at 77 K A. S. Nicolett, J. A. Martino, E. Simoen et C. ClaeysJ. Phys. IV France, 06 C3 (1996) C3-55-C3-59DOI: https://doi.org/10.1051/jp4:1996308
