Low-Temperature Modelling of Electron-Velocity-Overshoot Effects on 70-250 nm Gate-Length MOSFETs J. B. Roldán, F. Gámiz, J. A. López-Villanueva et J. E. CarcellerJ. Phys. IV France, 06 C3 (1996) C3-13-C3-18DOI: https://doi.org/10.1051/jp4:1996302
