Low temperature performance of self-aligned "Etched Polysilicon" emitter pseudo-heterojunction bipolar transistors G. Giroult-Matlakowski, H. Bousseta, B. Le Tron, D. Dutartre, P. Warren, M. J. Bouzid, A. Nouailhat, P. Ashburn et A. ChantreJ. Phys. IV France, 04 C6 (1994) C6-111-C6-115DOI: https://doi.org/10.1051/jp4:1994617