Hot carrier effects in sub-0.1 µm gate length MOSFETs between room and liquid helium temperatures F. Balestra, M. Tsuno, T. Matsumoto, H. Nakabayashi et M. KoyanagiJ. Phys. IV France, 04 C6 (1994) C6-75-C6-80DOI: https://doi.org/10.1051/jp4:1994612
