Temperature dependence of exciton-capture at impurities in GaAs/AlxGa(1-x) As quantum wells C. I. HARRIS, B. MONEMAR, P. O. HOLTZ, H. KALT, M. SUNDARAM, J. L. MERZ et A. C. GOSSARDLe Journal de Physique IV, 03 C5 (1993) C5-171-C5-174DOI: https://doi.org/10.1051/jp4:1993531
