LPCVD of SiC layers in a hot-wall reactor using TMS precursor F. HENRY, P. MARTI, Y. CASAUX, C. COMBESCURE, A. FIGUERAS, V. MADIGOU, R. RODRIGUEZ-CLEMENTE, A. MAZEL, J. SEVELY et B. ARMASJ. Phys. IV France, 03 C3 (1993) C3-329-C3-336DOI: https://doi.org/10.1051/jp4:1993345
