Heterostructure of binaries II-VI semiconductors ZnTe and ZnSe / III-V (GaAs, InP, GaSb) A. HAIDOUX, P. TOMASINI, M. MAURIN, J. C. TEDENAC, D. COQUILLAT, A. RIBAYROL, J. P. LASCARAY, D. BOUCHARA, A. ABOUNADI, J. CALAS et B. DUCOURANTJ. Phys. IV France, 03 C3 (1993) C3-147-C3-154DOI: https://doi.org/10.1051/jp4:1993318
