Mass spectrometry study of the gas phase reactions in the CVD of Si and in situ-phosphorus doped Si in order to explain the different growth rates J. SIMON, R. FEURER, A. REYNES et R. MORANCHOJ. Phys. IV France, 03 C3 (1993) C3-99-C3-105DOI: https://doi.org/10.1051/jp4:1993312
