CONDITIONS FOR OBTAINING IN-SITU PHOSPHORUS DOPED LPCVD POLYSILICON LAYERS WITH HIGH CONDUCTIVITY ONTO GLASS SUBSTRATES M. SARRET, A. LIBA, O. BONNAUD, M. MOKHTARI et B. FORTINJ. Phys. IV France, 02 C2 (1991) C2-817-C2-822DOI: https://doi.org/10.1051/jp4:1991296
