EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD D. W. McNEILL, Y. LIANG, J. H. MONTGOMERY, H. S. GAMBLE et B. M. ARMSTRONGJ. Phys. IV France, 02 C2 (1991) C2-779-C2-786DOI: https://doi.org/10.1051/jp4:1991291
