INFLUENCE OF H2 PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE A. FIGUERAS, R. RODRIGUEZ-CLEMENTE, S. GARELIK, J. SANTISO, B . ARMAS, C. COMBESCURE, A. MAZEL, Y. KIHN et J. SÉVELYJ. Phys. IV France, 02 C2 (1991) C2-225-C2-232DOI: https://doi.org/10.1051/jp4:1991228
