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Cited article:

CVD Copper Deposition from Cu^I(HFAC)TMVS Studied Through a Modeling Experimental Design

J.-L. Mermet, M.-J. Mouche, F. Pires, E. Richard, J. Torres, J. Palleau, F. Braud

J. Phys. IV France, 05 C5 (1995) C5-517-C5-523

DOI: https://doi.org/10.1051/jphyscol:1995560

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This article has been cited by the following article(s):

Nucleation and film growth during copper chemical vapor deposition using the precursor Cu(TMVS)(hfac)

Daewon Yang, Jongwon Hong, David F. Richards and Timothy S. Cale
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 20 (2) 495 (2002)
https://doi.org/10.1116/1.1450590

Nucleation of copper on TiN and SiO[sub 2] from the reaction of hexafluoroacetylacetonate copper(I) trimethylvinylsilane

P. F. Ma, T. W. Schroeder and J. R. Engstrom
Applied Physics Letters 80 (14) 2604 (2002)
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Evolution of Surface Morphology During Cu(TMVS)(hfac) Sourced Copper CVD

Daewon Yang, Jongwon Hong and Timothy S. Cale
MRS Proceedings 612 (2000)
https://doi.org/10.1557/PROC-612-D9.16.1

Preparation of thin copper films from the vapour phase of volatile copper(I) and copper(II) derivatives by the CVD method

Vladimir N Vertoprakhov and Sergey A Krupoder
Russian Chemical Reviews 69 (12) 1057 (2000)
https://doi.org/10.1070/RC2000v069n12ABEH000572