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Cited article:
A.-M. Dutron , E. Blanquet , V. Ghetta , R. Madar , C. Bernard
J. Phys. IV France, 05 C5 (1995) C5-1141-C5-1148
This article has been cited by the following article(s):
5 articles
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Composition and resistivity changes of reactively sputtered W–Si–N thin films under vacuum annealing
A. Vomiero, E. Boscolo Marchi, G. Mariotto, et al. Applied Physics Letters 88 (3) 031917 (2006) https://doi.org/10.1063/1.2166691
Structural and functional characterization of W-Si-N sputtered thin films for copper metallizations
Alberto Vomiero, Stefano Frabboni, Enrico Boscolo Marchi, et al. MRS Proceedings 812 F3.10 (2004) https://doi.org/10.1557/PROC-812-F3.10
The mechanical properties and microstructure of Ti–Si–N nanocomposite films by ion plating
Hisashi Watanabe, Yutaka Sato, Chaoyin Nie, et al. Surface and Coatings Technology 169-170 452 (2003) https://doi.org/10.1016/S0257-8972(03)00190-7
Evaluation of LPCVD MeSiN (MeTa, Ti, W, Re) diffusion barriers for Cu metallizations
E. Blanquet, A.M. Dutron, V. Ghetta, C. Bernard and R. Madar Microelectronic Engineering 37-38 189 (1997) https://doi.org/10.1016/S0167-9317(97)00111-1