Articles citing this article

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Cited article:

First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures Down to 10 Millikelvins

Xin Yang, Zineng Yang, Matthew Porter, Linbo Shao and Yuhao Zhang
IEEE Transactions on Power Electronics 41 (2) 1704 (2026)
https://doi.org/10.1109/TPEL.2025.3601008

Excellent energy‐storage property and thermal stability of PLZT‐based antiferroelectric ceramics

Yongxin Zhou, Jiake Xia, Xuefeng Chen and Genshui Wang
Journal of the American Ceramic Society 106 (1) 448 (2023)
https://doi.org/10.1111/jace.18757