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Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical vapor deposition
G. C. Chen, D.-C. Lim, S.-B. Lee, et al. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21(4) 1886 (2003) https://doi.org/10.1116/1.1585072
Structures and properties of BON and multilayered TiN/BON thin films prepared by PAMOCVD method