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Trends in Copper Precursor Development for CVD and ALD Applications

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Nonthermal plasma synthesis of metal sulfide nanocrystals from metalorganic vapor and elemental sulfur

Elijah Thimsen, Uwe R Kortshagen and Eray S Aydil
Journal of Physics D: Applied Physics 48 (31) 314004 (2015)
https://doi.org/10.1088/0022-3727/48/31/314004

Comparative Study on Cu-CVD Nucleation Using β-diketonato and Amidinato Precursors for Sub-10-nm-Thick Continuous Film Growth

Kohei Shima, Hideharu Shimizu, Takeshi Momose and Yukihiro Shimogaki
ECS Journal of Solid State Science and Technology 4 (8) P305 (2015)
https://doi.org/10.1149/2.0061508jss

Surface-Selective Chemical Vapor Deposition of Copper Films through the Use of a Molecular Inhibitor

Shaista Babar, Elham Mohimi, Brian Trinh, Gregory S. Girolami and John R. Abelson
ECS Journal of Solid State Science and Technology 4 (7) N60 (2015)
https://doi.org/10.1149/2.0061507jss

Copper Oxide Films Grown by Atomic Layer Deposition from Bis(tri-n-butylphosphane)copper(I)acetylacetonate on Ta, TaN, Ru, and SiO[sub 2]

Thomas Waechtler, Steffen Oswald, Nina Roth, et al.
Journal of The Electrochemical Society 156 (6) H453 (2009)
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Hot‐wire CVD of copper films on self‐assembled‐monolayers of MPTMS

G. Papadimitropoulos, A. Arapoyianni and D. Davazoglou
physica status solidi (a) 205 (11) 2607 (2008)
https://doi.org/10.1002/pssa.200780155

Effects of the underlayer substrates on copper chemical vapor deposition

Cheng-Li Lin, Peng-Sen Chen and Mao-Chieh Chen
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 20 (3) 1111 (2002)
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Effects of TaN Substrate Pretreatment by Ar Plasma on Copper Chemical Vapor Deposition

Cheng-Li Lin, Peng-Sen Chen and Mao-Chieh Chen
Journal of The Electrochemical Society 149 (5) C237 (2002)
https://doi.org/10.1149/1.1462794

Characteristics of copper films deposited on H[sub 2]-plasma-treated TaN substrate by chemical vapor deposition

Cheng-Li Lin, Peng-Sen Chen, Chun-Li Chang and Mao-Chieh Chen
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 20 (5) 1947 (2002)
https://doi.org/10.1116/1.1502697

Low-temperature copper etching via reactions with Cl2 and PEt3 under ultrahigh vacuum conditions

J. Farkas, K.-M. Chi, M. J. Hampden-Smith, T. T. Kodas and L. H. Dubois
Journal of Applied Physics 73 (3) 1455 (1993)
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