| Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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| Page(s) | C5-719 - C5-734 | |
| DOI | https://doi.org/10.1051/jphyscol:1995587 | |
J. Phys. IV France 05 (1995) C5-719-C5-734
DOI: 10.1051/jphyscol:1995587
Low Temperature Deposition of TiN Ceramic Material by Metal Organic and/or Plasma Enhanced CVD
C.I.M.A. Spee, J.P.A.M. Driessen and A.D. KuypersTNO Institute of Applied Physics, Department of Materials Chemistry and Coatings, P.O. Box 595, 5600 AN Eindhoven, The Netherlands
Abstract
A review is presented describing the development of TiN-CVD from the classical, high temperature TiCl4/N2 process, towards low temperature MOCVD processes. This development is presented from a chemical point of view. In addition to low pressure (LPCVD) and atmospheric pressure (APCVD) thermal processing, also plasma enhanced (PECVD) techniques are described. In the past few years production facilities for good quality TiN layers for wear resistant applications have come on the market. Production facilities for IC-technology applications of CVD-TiN are on the edge of breaking through. For both applications deposition temperatures have been reduced to 500-600°C. Research developments, have shown even lower deposition temperatures possible for TiN and Ti(C,N) layers.
© EDP Sciences 1995