| Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | C5-331 - C5-338 | |
| DOI | https://doi.org/10.1051/jphyscol:1995539 | |
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
J. Phys. IV France 05 (1995) C5-331-C5-338
DOI: 10.1051/jphyscol:1995539
Eindhoven University of Technology, Laboratorium voor Chemische Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
© EDP Sciences 1995
J. Phys. IV France 05 (1995) C5-331-C5-338
DOI: 10.1051/jphyscol:1995539
Modelling of the Deposition of Molybdenum on Silicon from Molybdenum Hexafluoride and Hydrogen
E.N. Orij, M.H.J.M. de Croon and G.B. MarinEindhoven University of Technology, Laboratorium voor Chemische Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Abstract
The deposition of molybdenum on silicon from MoF6 and H2 is studied using a microbalance setup. The deposition rate is time dependent, which is explained by the significant contribution of the reduction of MoF6 by Si. A model taking into account both deposition routes and in particular diffusion of Si through the growing layer allows to describe the observations quantitatively. The relative importance of two routes was assessed and the kinetics of the reduction by H2 could be distinguished from the overall growth kinetics. A partial reaction order of 1.4 in hydrogen was found for the reduction of MoF6 by H2. The order in MoF6 is negative.
© EDP Sciences 1995