Growth Stability in Semiopen Physical Vapour Transport

C. Paorici; M. Zha; L. Zanotti; L. Carotenuto; T. Tiberti

doi:doi:10.1051/jphyscol:19955124

Numéro		J. Phys. IV France Volume 05, Numéro C5, Juin 1995 Proceedings of the Tenth European Conference on Chemical Vapour Deposition


Page(s)		C5-1053 - C5-1060
DOI		https://doi.org/10.1051/jphyscol:19955124

Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-1053-C5-1060
DOI: 10.1051/jphyscol:19955124

Growth Stability in Semiopen Physical Vapour Transport

C. Paorici¹, M. Zha², L. Zanotti², L. Carotenuto³ and T. Tiberti³

¹ Physics Dept., Univ. of Parma, 43100 Parma, Italy
² MASPEC-CNR Institute, 43100 Parma, Italy
³ MARS-Center, 80125 Naples, Italy

Abstract
An interface stability model is proposed for crystal growth by physical vapour transport (PVT) in semiopen (SO) systems, which is based on the constitutional supercooling criterium. The model, whose main feature is the relaxation of the local eqilibriurn assumption at the growing interface, proved suitable for explaining the remarkable growth stability in SO systems when applied to urea growth. A semiempirical approach for estimating the pressure inside a SO-system and the kinetic contributions to stability is also proposed, which allows for quantitative comparison of model and experimental results.