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Foreword
Numéro |
J. Phys. IV France
Volume 132, March 2006
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Page(s) | III - 3 | |
DOI | https://doi.org/10.1051/jp4:2006132001 | |
Publié en ligne | 11 mars 2006 |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) III-3
DOI: 10.1051/jp4:2006132001
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) III-3
DOI: 10.1051/jp4:2006132001
Preface
C. Girardeaux, B. Aufray, J. Bernardini, H. Dallaporta, G. Le Lay and P. Soukiassian Abstract
The collection of papers in this volume is based on presentations made at
the 10th International Conference on the Formation of Semiconductor Interfaces (ICFSI-10). The conference was held
at the Université Paul Cézanne in Aix-en-Provence, the home town of the famous painter, in southern France, from July
3 to 8, 2005. 2005 marked the 20th anniversary of the ICFSI series and was the World Year of Physics. Therefore, the
ICFSI-10 program was organized within this framework. In this view, a special Plenary Lectures session addressed historical
background, perspectives and frontiers in semiconductor surface, interface and nanostructures physics.
© EDP Sciences 2006