Numéro |
J. Phys. IV France
Volume 119, November 2004
|
|
---|---|---|
Page(s) | 147 - 148 | |
DOI | https://doi.org/10.1051/jp4:2004119030 |
J. Phys. IV France 119 (2004) 147-148
DOI: 10.1051/jp4:2004119030
Sb-based VCSEL operating at 2.3
m in continuous wave regime up to 350 K with a TEM
00 beam
L. Cerutti, A. Garnache, A.Ouvrard and F. Genty Centre d'Électronique et de Micro-optoélectronique de Montpellier (CEM2), UMR CNRS 5507, Case 067, Université de Montpellier-II, 34 095 Montpellier Cedex 05, France
Abstract
we report on the growth by MBE and characterization of a laser diode pumped Vertical Cavity Surface Emitting Laser, where
the optical cavity is formed by the Bragg mirror, an air gap and a dielectric concave mirror. The laser operates at 2.43
m in continuous wave regime up to 350K with a circular TEM
00 beam.
© EDP Sciences 2004