| Numéro |
J. Phys. IV France
Volume 114, April 2004
|
|
|---|---|---|
| Page(s) | 497 - 499 | |
| DOI | https://doi.org/10.1051/jp4:2004114115 | |
J. Phys. IV France 114 (2004) 497
DOI: 10.1051/jp4:2004114115
Structural and electrical properties of
(DT-TTF)
[ Cu(mnt)
]
J.C. Dias1, E.B. Lopes1, I.C. Santos1, M.T. Duarte1, R.T. Henriques2, M. Almeida1, 1, X. Ribas3, C. Rovira3, J. Veciana3, P. Foury-Leylekian4, J.-P. Pouget4, P. Auban-Senzier4 and D. Jérome4
1 Departamento de Química, Instituto Tecnológico e Nuclear, 2686-953 Sacavém, Portugal
2 Departamento de Engenharia Química, Instituto Superior Técnico, 1049-001 Lisboa, Portugal
3 Instituto de Ciència de Materiales de Barcelona, CSIC, Campus de la UAB, 8193 Bellaterra, Spain
4 Laboratoire de Physique des Solides, Bâtiment 510, Univ. Paris-Sud, 91405 Orsay, France
Abstract
Transport properties of (DT-TTF)
2[ Cu(mnt)
2]
show a semiconducting behaviour comparable to the one of the isostructural
Au analogue but with a sharp 2
order phase transition at T
=235
K. Under pressure, T
decreases and the compound becomes metallic above
T
for pressures higher than 15 kbar. The X-ray scattering study shows
that the transition at T
corresponds to a dimerisation of the
molecules along the stacking direction.
Key words. Electrical conductivity - X-ray scattering - Pressure
studies - Spin-ladder compounds.
© EDP Sciences 2004