| Numéro |
J. Phys. IV France
Volume 114, April 2004
|
|
|---|---|---|
| Page(s) | 137 - 139 | |
| DOI | https://doi.org/10.1051/jp4:2004114032 | |
J. Phys. IV France 114 (2004) 137
DOI: 10.1051/jp4:2004114032
Enhanced dielectric response in (BEDT-TTF) (ClMeTCNQ) at the neutral-ionic phase transitions
Y. Takahashi1, T. Hasegawa2, T. Akutagawa3 and T. Nakamura31 Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0812, Japan
e-mail: yukihiro@es.hokudai.ac.jp
2 Correlated Electron Research Center, AIST, Tsukuba 305-8562, Japan
3 Research Institute for Electronic Science, Hokkaido University, Sapporo 060-0812, Japan
Abstract
We have studied dielectric properties of
(BEDT-TTF)(ClMeTCNQ) around the neutral-ionic (NI) transitions, whose
critical temperatures can be tuned from 300 K to 0 K by variation of
pressure in the range between
GPa. We found that
thermal-activation-type dielectric response becomes predominant around the
transitions higher than 50 K, while Curie-Weiss type enhancement was not
detected above the transitions. Here we feature the dielectric properties in
the range above 50 K, so as to contrast another type of dielectrical
enhancement observed around the quantum critical point of the NI valence
instabilities in (BEDT-TTF)(ClMeTCNQ).
Key words. charge-transfer complex - neutral-ionic phase
transition - dielectric properties.
© EDP Sciences 2004