| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
|
|
|---|---|---|
| Page(s) | Pr3-461 - Pr3-466 | |
| DOI | https://doi.org/10.1051/jp4:2001358 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-461-Pr3-466
DOI: 10.1051/jp4:2001358
1 University of Essex, Aerosol Science Group, Department of Biological Sciences, Wivenhoe Park, Colchester CO4 3SQ. U. K.
2 Delft University of Technology, Laboratory for Inorganic Chemistry, Julianalaan 136, 2628 Delft, The Netherlands
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-461-Pr3-466
DOI: 10.1051/jp4:2001358
Formation of cubic SiC nanocrystals by laser-assisted CVD
Y. Kamlag1, 2, A. Goossens2, I. Colbeck1 and J. Schoonman21 University of Essex, Aerosol Science Group, Department of Biological Sciences, Wivenhoe Park, Colchester CO4 3SQ. U. K.
2 Delft University of Technology, Laboratory for Inorganic Chemistry, Julianalaan 136, 2628 Delft, The Netherlands
Abstract
Nanocrystals of cubic Silicon carbide (SiC) are formed using laser-assisted chemical vapor deposition. A CO2 laser beam is mechanically chopped to obtain pulsed infra-red excitation. Silane (SiH4) and acetylene (C2 H2) have been used as precursors. The formed SiC has the zinc-blende crystal phase (β-phase) with an average primary particle size of about 12 nm. As expected, higher chop frequencies yield smaller crystals. To establish electronic isolation between the particles, a native oxide shell of SiO2 can be formed by heating the particles in air. Subsequent etching with HF removes the oxide shell leading to further reduction of the particle size down to 4 nm.
© EDP Sciences 2001